Bill of Material for hphone2 v1.5.Bom Used Part Type Designator Footprint Description ==== ===================== ========== ================= =========================================== 2 1M Rser Rser2 1206 Resistencia SMD 1206 7 1k R1 R2 R5 1206 Resistencia SMD 1206 RFB1 Rp1 Rp2 Rp5 2 1k R7 R9 POT-PLANO-200X200 potentiometer 2 1m_25 C3N C3P CAP-200/400mil Condensador electrolítico 5 3k3 R3 R4 RFB2 1206 Resistencia SMD 1206 Rp3 Rp4 1 3n3 Cin 1206 MKT/MKP cap 2 10R R16 R17 1206 Resistencia SMD 1206 1 22k Rp6 1206 Resistencia SMD 1206 1 22p CMill2 1206 ceramic cap 2 47k R18 R19 1206 Resistencia SMD 1206 1 56R R6 1206 Resistencia SMD 1206 4 56R R10 R11 axial0.3 Resistencia 1W R14 R15 2 100 Rv1 Rv2 1206 Resistencia SMD 1206 3 100k Rp7 Rp8 1206 Resistencia SMD 1206 Rser3 2 220R R12 R13 1206 Resistencia SMD 1206 2 220n Cser1 MK200slim MKT/MKP cap Cser2 1 560R R8 1206 Resistencia SMD 1206 4 BC546 Q1 Q2 Q3pb TO92-123(CBE) NPN low noise 60V 100mA 625mW Q10 4 BC556 Q1p Q2p TO92-123(CBE) NPN low noise 60V 100mA 625mW Q3b Q9 4 BC850 Q3 Q4 Q5p SOT-23 Transistor NPN bajo ruido 45V, 250mW, 200mA Q16 4 BC860 Q3p Q4p Q5 sot-23 Transistor PNP bajo ruido 45V 250mW Q15 1 BD139 Q11 TO126-312(ECB) NPN driver 80V 1.5A 12W 1 BD140 Q12 TO126-312(ECB) PNP driver 80V 1.5A 12W 1 BD679 Q14 TO126-312(ECB) NPN darlington, 80V, 4A, 40W 1 BD680 Q13 TO126-312(ECB) PNP darlington 100V 40W 2 BSR58 J4 J4p SOT23 N channel Jfet, SMD, 300mW, 40V 1 OP-07 U2 DIP8SMD 1 m1_10 Cbias CAP-140/200mil Condensador electrolítico 2 m1_16 C4N C4P CAP-100/200mil Condensador electrolítico 2 m22_25 C2N C2P CAP-140/200mil Condensador electrolítico 2 u1 C1N C1P 1206 ceramic cap 1 u22 Cfb CAP-100/200mil Condensador electrolítico no polarizado