Bill of Material for etapa S-Sub mosfet Used Part Type Designator Footprint Description ==== ====================== ========== ================= ========================================= 1 0R15 Rs1 RES 25mm Resistor wirewound 5W 1 0R15 Rs2 R_PWR_VERT2 Resistor wirewound 5W 1 1N400X dt DIODO0.3 rectifier 1A 50,100,200,300,400,600,1000V 1 1k8 R5 axial0.3 Resistencia 0.25W 1 1k R5b POT-PLANO-200X200 potentiometer 1 1k Rpolar POT-PLANO-400X200 potentiometer 2 1k R3 R3b axial0.3 Resistencia 0.25W 1 2k2 Rtb axial0.3 Resistencia 0.25W 2 4v7 D1 D2 DIODO0.2 ZENER DIODE 1 8r2 R4 axial0.3 Resistencia 0.25W 1 9v1 D3 DIODO0.2 ZENER DIODE 3 10k R7 R9 R15 axial0.3 Resistencia 0.25W 1 10n C6 MK200slim MKT/MKP cap 1 22k R17 axial0.3 Resistencia 0.25W 2 22u C1 C2 CAP-100/200mil Condensador electrolítico 2 33R R1 R2 axial0.3 Resistencia 0.25W 1 47k R13 axial0.3 Resistencia 0.25W 1 47p CMiller CER100 ceramic cap 1 100R Rta axial0.3 Resistencia 0.25W 1 100u63 C4 CAP-200/400mil Condensador electrolítico 1 100u 63 C3 CAP-200/400mil Condensador electrolítico 1 100u Ct CAP-200/200mil Condensador electrolítico 2 220u63 C7 C8 CAP-200/400mil Condensador electrolítico 1 220u CFB CAP-140/300mil Condensador electrolítico no polarizado 4 470R R10 R11 axial0.3 Resistencia 0.25W R14 R16 1 680R R6 axial0.3 Resistencia 0.25W 2 BC546 Q1 Q2 TO92-123(CBE) NPN low noise 30V, 100mA, 500mW 1 BC556 Q11 TO92-123(CBE) NPN low noise 30V, 100mA, 500mW 3 BC639 Q3 Q4 Q5 TO92-312(ECB) NPN 80V 1A 1W 2 BD139 Q9 Qt TO126-312(ECB) NPN driver 80V 1.5A 12W 1 BD140 Q12 TO126-312(ECB) PNP driver 80V 1.5A 12W 1 IRFP240 M1 TO247 N-channel mosfet 200V 20A, 150W 1 IRFP9240 M2 TO247 P-channel mosfet 200V 12A, 150W 2 faxton vm vp faxton conector 1